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FZTA64 Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. FZTA64
Description  PNP SILICON PLANAR DARLINGTON TRANSISTORS
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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SOT223 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 5– MARCH 2001
PARTMARKING DETAILS:
FZTA64
COMPLIMENTARY TYPE:
FZTA14
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-10
V
Peak Pulse Current
ICM
-800
mA
Continuous Collector Current
IC
-500
mA
Peak Base Current
IBM
-200
mA
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-30
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-30
V
IC=-10mA, IB=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-10
V
IE=-10µA, IC=0
Collector Cut-Off
Current
ICBO
-100
nA
VCB=-30V, IE=0
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-10V, IC=0
Collector-Emitter Saturation
Voltage
VCE(sat)
-1.5
V
IC=-100mA, IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-2.0
V
IC=-100mA, IB=-0.1mA*
Static Forward Current
Transfer Ratio
hFE
10K
20K
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V*
Transition
Frequency
fT
125
MHz
IC=-50mA, VCE=-5V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
FZTA64
SOT223
2
1
3
4
TBA




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