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74HC1G00GW Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. 74HC1G00GW
Description  2-input NAND gate
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74HC1G00GW Datasheet(HTML) 5 Page - NXP Semiconductors

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74HC_HCT1G00_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 11 July 2007
5 of 10
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
11. Dynamic characteristics
[1]
tpd is the same as tPLH and tPHL.
[2]
CPD is used to determine the dynamic power dissipation PD (µW).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
∑ (C
L × VCC
2
× f
o) = sum of outputs
12. Waveforms
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb =25 °C. For test circuit see Figure 6
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
For type 74HC1G00
tpd
propagation delay A and B to Y; see Figure 5
[1]
VCC = 2.0 V; CL = 50 pF
-
25
115
-
135
ns
VCC = 4.5 V; CL =50pF
-
9
23
-
27
ns
VCC = 5.0 V; CL =15pF
-
7
-
-
-
ns
VCC = 6.0 V; CL =50pF
-
8
20
-
23
ns
CPD
power dissipation
capacitance
VI = GND to VCC
[2]
-19-
-
-
pF
For type 74HCT1G00
tpd
propagation delay A and B to Y; see Figure 5
[1]
VCC = 4.5 V; CL = 50 pF
-
12
24
-
27
ns
VCC = 5.0 V; CL =15pF
-
10
-
-
-
ns
CPD
power dissipation
capacitance
VI = GND to VCC − 1.5 V
[2]
-21-
-
-
pF
For HC1G: VM = 0.5 × VCC; VI = GND to VCC
For HCT1G: VM = 1.3 V; VI = GND to 3.0 V
Test data is given in Table 8.
CL = Load capacitance including jig and probe
capacitance.
RT = Termination resistance should be equal to
output impedance Zo of the pulse generator.
Fig 5.
Input to output propagation delays
Fig 6.
Load circuitry for switching times
mna100
A, B input
Y output
tPHL
tPLH
VM
VM
mna101
VCC
VI
VO
RT
CL
PULSE
GENERATOR
DUT


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