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FZT696B Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. FZT696B
Description  NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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FZT696B Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 4 – FEBRUARY 1997
FEATURES
* 250 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL –
FZT696B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
180
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
1A
Continuous Collector Current
IC
0.5
A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 180
V
IC=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO 180
V
IC=10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µ
A
VCB=140V
Emitter Cut-Off Current
IEBO
0.1
µ
A
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter Saturation Voltage
VBE(sat)
0.9
V
IC=200mA, IB=5mA*
Base-Emitter Turn-OnVoltage
VBE(on)
0.9
V
IC=200mA, VCE=5V*
Static Forward Current Transfer
Ratio
hFE
500
150
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
Transition Frequency
fT
70
MHz IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Cibo
200
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
6pF
VCE=10V, f=1MHz
Switching Times
ton
toff
80
4400
ns
ns
IC=100mA, IB1=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT696B
FZT696B
3 - 227
C
C
E
B
3 - 228
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
VCE(sat) v IC
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I+ -
Collector Current (Amps)
VBE(on) v IC
1.5K
1K
500
Tamb=25°C
-55°C
+25°C
+100°C
+175°C
0
0
-55°C
+25°C
+100°C
+175°C
VCE=5V
IC/IB=50
IC/IB=50
VCE=5V
IC/IB=10
IC/IB=100
IC/IB=50
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100µs
1ms
1V
0.01
1000V
0.001


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