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FZT694B Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. FZT694B
Description  NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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FZT694B Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* High VCEO / Very Low Saturation Voltage
* Gain of 400 at IC=200mA
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
PARTMARKING DETAIL -
FZT694B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
2A
Continuous Collector Current
IC
1A
Power Dissipation Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO
120
V
IC=100µA
V(BR)CEO
120
V
IC=10mA*
V(BR)EBO
5V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µ
A
VCB=100V
Emitter Cut-Off Current
IEBO
0.1
µ
A
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25
0.5
V
V
IC=100mA, IB=0.5mA*
IC=400mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9
V
IC=1A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
500
400
150
IC=100mA, VCE=2V*
IC=200mA, VCE=2V*
IC=400mA, VCE=2V*
Transition Frequency
fT
130
MHz
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Cibo
200
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
9pF
VCB=10V, f=1MHz
Switching Times
ton
toff
80
2900
ns
ns
IC=100mA, IB!=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT694B
FZT694B
C
C
E
B
3 - 226
3 - 225
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
VCE(sat) v IC
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I+ -
Collector Current (Amps)
VBE(on) v IC
VCE=2V
VCE=2V
1.5K
1K
500
Tamb=25°C
IC/IB=100
-55°C
+25°C
+100°C
+175°C
0
0
-55°C
+25°C
+100°C
+175°C
IC/IB=100
IC/IB=10
IC/IB=200
IC/IB=100
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100us
1ms
1
0.01
1000
10


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