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FMMTL717 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. FMMTL717
Description  PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
Download  3 Pages
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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FMMTL717 Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-12
-35
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-12
-25
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-8.5
V
IE=-100µA
Collector Cut-Off Current ICBO
-10
nA
VCB=-10V
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-4V
Collector Cut-Off Current ICES
-10
nA
VCE=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-24
-94
-160
-200
-40
-140
-240
-290
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
IC=-1.25A,IB=-50mA
Base-Emitter
Saturation Voltage
VBE(sat)
-970
-1100
mV
IC=-1.25A, IB=-50mA*
Base-Emitter
Turn On Voltage
VBE(on)
-875
-1000
mV
IC=-1.25A, VCE=-2V*
Static Forward
Current Transfer Ratio
hFE
300
300
180
100
50
490
450
275
180
110
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
Transition Frequency
fT
205
MHz
IC=-50mA, VCE=-10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
15
20
pF
VCB=-10V, f=1MHz
Switching times
ton
toff
76
149
ns
ns
IC=-1A, VCC=-10V
IB1=IB2=-10mA
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
FMMTL717


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