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74ALVC125PW Datasheet(PDF) 4 Page - NXP Semiconductors

Part # 74ALVC125PW
Description  Quad buffer/line driver; 3-state
Download  13 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74ALVC125PW Datasheet(HTML) 4 Page - NXP Semiconductors

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74ALVC125_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 10 January 2008
4 of 13
NXP Semiconductors
74ALVC125
Quad buffer/line driver; 3-state
8.
Recommended operating conditions
9.
Static characteristics
Table 5.
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
1.65
3.6
V
VI
input voltage
0
3.6
V
VO
output voltage
output HIGH or LOW state
0
VCC
V
output 3-state
0
3.6
V
Power-down mode; VCC = 0 V
0
3.6
V
Tamb
ambient temperature
in free air
−40
+85
°C
∆t/∆V
input transition rise and fall rate
VCC = 1.65 V to 2.7 V
0
20
ns/V
VCC = 2.7 V to 3.6 V
0
10
ns/V
Table 6.
Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
−40 °C to +85 °C
Unit
Min
Typ[1]
Max
VIH
HIGH-level input voltage
VCC = 1.65 V to 1.95 V
0.65
× VCC
--
V
VCC = 2.3 V to 2.7 V
1.7
-
-
V
VCC = 2.7 V to 3.6 V
2.0
-
-
V
VIL
LOW-level input voltage
VCC = 1.65 V to 1.95 V
-
-
0.35
× VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 2.7 V to 3.6 V
-
-
0.8
V
VOH
HIGH-level output voltage
VI =VIH or VIL
IO = −100 µA; VCC = 1.65 V to 3.6 V
VCC − 0.2
-
-
V
IO = −6 mA; VCC = 1.65 V
1.25
1.51
-
V
IO = −12 mA; VCC = 2.3 V
1.8
2.10
-
V
IO = −18 mA; VCC = 2.3 V
1.7
2.01
-
V
IO = −12 mA; VCC = 2.7 V
2.2
2.53
-
V
IO = −18 mA; VCC = 3.0 V
2.4
2.76
-
V
IO = −24 mA; VCC = 3.0 V
2.2
2.68
-
V
VOL
LOW-level output voltage
VI =VIH or VIL
IO = 100 µA; VCC = 1.65 V to 3.6 V
-
-
0.2
V
IO = 6 mA; VCC = 1.65 V
-
0.11
0.3
V
IO = 12 mA; VCC = 2.3 V
-
0.17
0.4
V
IO = 18 mA; VCC = 2.3 V
-
0.25
0.6
V
IO = 12 mA; VCC = 2.7 V
-
0.16
0.4
V
IO = 18 mA; VCC = 3.0 V
-
0.23
0.4
V
IO = 24 mA; VCC = 3.0 V
-
0.30
0.55
V
II
input leakage current
VCC = 3.6 V; VI = 3.6 V or GND
-
±0.1
±5
µA


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