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FMMT614 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. FMMT614
Description  NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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FMMT614 Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 – APRIL 1996
FEATURES
*hFE up to 5k at Ic= 500mA
* Fast switching
* Low VCE(sat) at High Ic
PARTMARKING DETAILS – 614
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
2A
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
120
300
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus)
100
130
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
14
V
IE=10µA, IC=0
Collector Cut-Off Current ICBO
0.02
10
nA
VCB=100V, IE=0
Collector Cut-Off Current ICES
10
µ
A
VCES=100V, IE=0
Emitter Cut-Off Current
IEBO
100
nA
VEB=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.9
0.78
1.0
0.9
V
V
IC=500mA, IB=5mA*
IC=100mA, IB=0.1mA
Base-Emitter Saturation
Voltage
VBE(sat)
1.7
1.9
V
IC=500mA, IB=5mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.5
1.8
V
IC=500mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
15K
5K
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
Output Capacitance
Cobo
6pF
VCB=10V, f=100mHz
Switching Times
ton
0.7
µ
sIC=100µA, IB=0.1mA
VS=10V
toff
2.5
µ
s
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.
FMMT614
C
B
E
3 - 147
FMMT614
1m
100m
10
1m
100m
10
1m
100m
10
10m
1
100
10
100m
1m
1m
100m
10
IC - Collector Current (A)
VCE(sat) v IC
0
1
2
I+/I*=1000
I+/I*=2000
I+/I*=5000
+25°C
-55°C
75k
+100°C
0
IC - Collector Current (A)
hFE v IC
+25°C
+100°C
2
1
-55°C
0
IC - Collector Current (A)
VBE(on) v IC
+100°C
+150°C
2
1
+25°C
0
IC - Collector Current (A)
VCE(sat) v IC
+100°C
+150°C
2.4
1.2
+25°C
0
IC - Collector Current (A)
VBE(sat) v IC
1s
100ms
10
0.1
DC
0.001
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100µs
+150°C
V+-=5V
+25°C
-55°C
I+/I*=1000
V+-=5V
-55°C
I+/I*=1000
100m
10
0.01
1
10m
1
10m
1
10m
1
10m
1
10m
1
25k
50k
TYPICAL CHARACTERISTICS
PAGE NUMBER


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