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FCX658A Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. FCX658A
Description  NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
Download  4 Pages
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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FCX658A Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
400
480
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO)
400
465
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
57.8
V
IE=100µA
Collector Cut-Off
Current
ICBO
100
nA
VCB=320V
Collector Cut-Off
Current
ICES
100
nA
VCE=320V
Emitter Cut-Off
Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.165
0.125
0.2
V
V
V
IC=20mA, IB=1mA
IC=50mA, IB=5mA*
IC=100mA,
IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.75
0.85
V
IC=100mA,
IB=10mA*
Base-Emitter
Turn On Voltage
VBE(on)
0.70
0.85
V
IC=100mA, VCE=5V*
Static Forward
Current Transfer
Ratio
hFE
85
100
55
35
150
170
130
90
IC=1mA, VCE=5V*
IC=10mA, VCE=10V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
Transition
Frequency
fT
50
MHz
IC=20mA, VCE=20V
f=20MHz
Output Capacitance
Cobo
10
pF
VCB=20V, f=1MHz
Switching times
ton
toff
130
3300
ns
ns
IC=100mA, VC=100V
IB1=10mA,
IB2=-20mA
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
NB
For high voltage applications the appropriate industry sector PCB guidelines should be
considered with regard to voltage spacing between conductors.
FCX658A


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