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2PD2150 Datasheet(PDF) 11 Page - NXP Semiconductors |
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2PD2150 Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 13 page 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 11 of 13 NXP Semiconductors 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes 2PD2150_2 20070102 Product data sheet - 2PD2150_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table 1 “Quick reference data”: IC collector current added • Table 1 “Quick reference data”: ICM peak collector current maximum value adapted • Table 1 “Quick reference data”: VCEsat collector-emitter saturation voltage added • Table 5 “Limiting values”: VCEO collector-emitter voltage maximum value adapted • Table 5 “Limiting values”: IC collector current maximum value adapted • Table 5 “Limiting values”: ICM peak collector current maximum value adapted • Table 5 “Limiting values”: Ptot total power dissipation for ceramic PCB condition added • Figure 1 “Power derating curves”: adapted • Table 6 “Thermal characteristics”: adapted • Table 6 “Thermal characteristics”: Rth(j-a) thermal resistance from junction to ambient for ceramic PCB condition added • Figure 2: tp pulse time redefined to pulse duration • Figure 3: added • Table 7 “Characteristics”: VCEsat collector-emitter saturation voltage typical value added • Table 7 “Characteristics”: fT transition frequency conditions slightly changed • Table 7 “Characteristics”: Cib common-base input capacitance added • Table 7 “Characteristics”: Cob common-base output capacitance added • Figure 4, 6, 10, 11, 12, 13 and 16: added • Figure 5, 7, 8 and 9: adapted • Section 12 “Legal information”: updated 2PD2150_1 20050422 Product data sheet - - |
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