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FCX1047A Datasheet(PDF) 2 Page - Zetex Semiconductors |
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FCX1047A Datasheet(HTML) 2 Page - Zetex Semiconductors |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 35 V IC=100µA Collector-Emitter Breakdown Voltage VCES 35 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 10 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 35 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current ICBO 0.3 10 nA VCB=20V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=20V Collector-Emitter Saturation Voltage VCE(sat) 25 50 140 160 220 40 70 200 240 350 mV mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=4A, IB=50mA* IC=5A, IB=25mA* Base-Emitter Saturation Voltage VBE(sat) 920 1000 mV IC=4A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 860 950 mV IC=4A, VCE=2V* Static Forward Current Transfer Ratio hFE 280 290 300 200 200 60 430 440 450 350 330 110 1200 IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* Transition Frequency fT 150 MHz IC=50mA, VCE=10V f=50MHz Output Capacitance Cobo 85 pF VCB=10V, f=1MHz Switching Times ton 130 ns IC=4A, IB=40mA, VCC=10V toff 230 ns IC=4A, IB=±40mA, VCC=10V *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% FCX1047A |
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