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FCX1047A Datasheet(PDF) 1 Page - Zetex Semiconductors |
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FCX1047A Datasheet(HTML) 1 Page - Zetex Semiconductors |
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SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 2 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent H FE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; R CE(sat) 40mΩ at 4A Complimentary Type - FCX1147A Partmarking Detail - 047 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ** ICM 20 A Continuous Collector Current IC 4A Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. C B C E FCX1047A |
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