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BSR43 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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BSR43 Datasheet(HTML) 1 Page - Zetex Semiconductors |
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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 ✪ COMPLEMENTARY TYPES – BSR33 PARTMARKING DETAIL – AR4 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 90 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 2A Continuous Collector Current IC 1A Base Current IB 100 mA Power Dissipation at Tamb=25°C PTOT 1W Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 90 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC=10mA * Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=10µA Collector Cut-Off Current ICBO 100 50 nA µA VCB=60V VCB=60V, Tamb =125°C Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC =150mA, IB =15mA IC =500mA, IB =50mA Base-Emitter Saturation Voltage VBE(sat) 1.0 1.2 V V IC =150mA, IB =15mA IC =500mA, IB =50mA Static Forward Current Transfer Ratio hFE 30 100 50 300 IC =100µA, VCE =5V IC =100mA, VCE =5V IC =500mA, VCE =5V Output Capacitance Cobo 12 pF VCB =10V, f=1MHz Input Capacitance Cibo 90 pF VEB =0.5V, f=1MHz Transition Frequency fT 100 MHz IC=50mA, VCE=10V f =35MHz Turn-On Time Ton 250 ns VCC =20V, IC =100mA IB1 =IB2 =5mA Turn-Off Time Toff 1000 ns *Measured under pulsed conditions. For typical characteristics graphs see FMMT493 datasheet. BSR43 C C B E SOT89 TBA |
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