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BSR43 Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. BSR43
Description  NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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BSR43 Datasheet(HTML) 1 Page - Zetex Semiconductors

   
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
COMPLEMENTARY TYPES –
BSR33
PARTMARKING DETAIL –
AR4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
90
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
2A
Continuous Collector Current
IC
1A
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
PTOT
1W
Operating and Storage Temperature Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
90
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
80
V
IC=10mA *
Emitter-Base Breakdown
Voltage
V(BR)EBO
5V
IE=10µA
Collector Cut-Off Current
ICBO
100
50
nA
µA
VCB=60V
VCB=60V, Tamb =125°C
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25
0.5
V
V
IC =150mA, IB =15mA
IC =500mA, IB =50mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
1.2
V
V
IC =150mA, IB =15mA
IC =500mA, IB =50mA
Static Forward
Current Transfer Ratio
hFE
30
100
50
300
IC =100µA, VCE =5V
IC =100mA, VCE =5V
IC =500mA, VCE =5V
Output Capacitance
Cobo
12
pF
VCB =10V, f=1MHz
Input Capacitance
Cibo
90
pF
VEB =0.5V, f=1MHz
Transition Frequency
fT
100
MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Ton
250
ns
VCC =20V, IC =100mA
IB1 =IB2 =5mA
Turn-Off Time
Toff
1000
ns
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
BSR43
C
C
B
E
SOT89
TBA


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