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BCV49 Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. BCV49
Description  NPN SILICON PLANAR DARLINGTON TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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BCV49 Datasheet(HTML) 1 Page - Zetex Semiconductors

   
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SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995
COMPLEMENTARY TYPE –
BCV48
PARTMARKING DETAILS –
EG
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
800
mA
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature
Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
80
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
60
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
V
IE=10µA
Collector Cut-Off
Current
ICBO
100
10
nA
µA
VCB=60V
VCB=60V, Tamb=150°C
Emitter Cut-Off Current IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
1V
IC=100mA, IB=0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.5
V
IC=100mA, IB=0.1mA*
Static Forward Current
Transfer Ratio
hFE
2000
4000
10000
2000
IC=100µA, VCE=1V†
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
Transition Frequency
fT
170
MHz
IC=50mA, VCE=5V
f = 20MHz
Output Capacitance
Cobo
3.5
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
For typical graphs see FMMT38A datasheet
† Periodic Sample Test Only.
Spice parameter data is available upon request for this device
BCV49
C
C
B
E
SOT89
3 - 26


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