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BCP53 Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. BCP53
Description  PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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BCP53 Datasheet(HTML) 1 Page - Zetex Semiconductors

   
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – AUGUST 1995
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE – BCP56
PARTMARKING DETAILS –
BCP53
BCP53 – 10
BCP53 – 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1.5
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-100
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-80
V
IC=- 10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-10µA
Collector Cut-Off
Current
ICBO
-100
-20
nA
µ
A
VCB=-30V
VCB=-30V, Tamb=150°C
Emitter Cut-Off Current IEBO
-10
µ
A
VEB=-5V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0
V
IC=-500mA, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
BCP53-10
BCP53-16
40
25
63
100
100
160
250
160
250
IC=-150mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-150mA, VCE=-2V*
IC=-150mA, VCE=-2V*
Transition Frequency
fT
125
MHz
IC=-50mA, VCE=-10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BCP53
C
C
E
B
3 - 15


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