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SSM9971GD Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM9971GD Datasheet(HTML) 2 Page - Silicon Standard Corp. |
2 / 5 page www.SiliconStandard.com 2 of 5 ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. SSM9971GD 10/16/2005 Rev.3.1 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-source breakdown voltage VGS=0V, ID=250uA 60 - - V ∆BV DSS/ ∆Tj Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C RDS(ON) Static drain-source on-resistance2 VGS=10V, ID=5A - - 50 m Ω VGS=4.5V, ID=2.5A - - 60 m Ω VGS(th) Gate threshold voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward transconductance VDS=10V, ID=5A - 7 - S IDSS Drain-source leakage current V DS=60V, VGS=0V - - 1 uA VDS=48V ,VGS=0V, Tj = 70°C - - 25 uA IGSS Gate-source leakage current VGS=±25V - - ±100 nA Qg Total gate charge 2 ID=5A - 32.5 - nC Qgs Gate-source charge VDS=48V - 4.9 - nC Qgd Gate-drain ("Miller") charge VGS=10V - 8.8 - nC td(on) Turn-on delay time 2 VDS=30V - 9.6 - ns tr Rise time ID=5A - 10 - ns td(off) Turn-off delay time RG=3.3Ω , VGS=10V - 30 - ns tf Fall time RD=6Ω - 5.5 - ns Ciss Input capacitance VGS=0V - 1560 - pF Coss Output capacitance VDS=25V - 156 - pF Crss Reverse transfer capacitance f=1.0MHz - 110 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward voltage 2 IS=1.6A, VGS=0V - - 1.2 V trr Reverse-recovery time IS=5A, VGS=0V, - 29.2 - ns Qrr Reverse-recovery charge dI/dt=100A/µs - 48 - nC |
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