SSM9960M datasheet(2/6 Pages) SSC

Part #	SSM9960M

Description	DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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Manufacturer	SSC [Silicon Standard Corp.]

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SSM9960M/GM

8/21/2004 Rev.2.01

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

40

-

V

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

-

0.032

-

V/°C

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V, ID=7A

-

20

m

Ω

VGS=4.5V, ID=5A

-

32

m

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1

-

3

V

gfs

Forward Transconductance

VDS=10V, ID=7A

-

25

-

S

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=40V, VGS=0V

-

1

uA

Drain-Source Leakage Current (Tj=70

oC)

VDS=32V ,VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS= ± 20V

-

±100

nA

Qg

Total Gate Charge

2

ID=7A

-

14.7

-

nC

Qgs

Gate-Source Charge

VDS=20V

-

7.1

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

-

6.8

-

nC

td(on)

Turn-on Delay Time

2

VDS=20V

-

11.5

-

ns

tr

Rise Time

ID=1A

-

6.3

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω ,VGS=10V

-

28.2

-

ns

tf

Fall Time

RD=20Ω

-

12.6

-

ns

Ciss

Input Capacitance

VGS=0V

-

1725

-

pF

Coss

Output Capacitance

VDS=25V

-

235

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

145

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

IS

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.3V

-

1.54

A

VSD

Forward On Voltage

2

Tj=25°C,IS=2.3A, VGS=0V

-

1.3

V

Notes:

1.Pulse width limited by max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.

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