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SSM9960M Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM9960M Datasheet(HTML) 2 Page - Silicon Standard Corp. |
2 / 6 page www.SiliconStandard.com 2 of 6 SSM9960M/GM 8/21/2004 Rev.2.01 Electrical Characteristics @ Tj=25 oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V ∆BV DSS/ ∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.032 - V/°C RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=7A - - 20 m Ω VGS=4.5V, ID=5A - - 32 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 25 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=32V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA Qg Total Gate Charge 2 ID=7A - 14.7 - nC Qgs Gate-Source Charge VDS=20V - 7.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6.8 - nC td(on) Turn-on Delay Time 2 VDS=20V - 11.5 - ns tr Rise Time ID=1A - 6.3 - ns td(off) Turn-off Delay Time RG=3.3Ω ,VGS=10V - 28.2 - ns tf Fall Time RD=20Ω - 12.6 - ns Ciss Input Capacitance VGS=0V - 1725 - pF Coss Output Capacitance VDS=25V - 235 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 145 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 1.54 A VSD Forward On Voltage 2 Tj=25°C,IS=2.3A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad. |
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