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SSM9585GM Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM9585GM Datasheet(HTML) 2 Page - Silicon Standard Corp. |
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2 / 5 page  www.SiliconStandard.com 2 of 5 3/21/2005 Rev.2.01 ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -80 - - V ∆BV DSS/ ∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA - -0.07 - V/°C RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-2.7A - - 180 m Ω VGS=-4.5V, ID=-2.5A - - 200 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-2.7A - 5 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-80V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=-64V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=±25V - - nA Qg Total Gate Charge 2 ID=-2.7A - 18 28 nC Qgs Gate-Source Charge VDS=-64V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 7 - nC td(on) Turn-on Delay Time 2 VDS=-40V - 10 - ns tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=-10V - 67 - ns tf Fall Time RD=40Ω 30 - ns Ciss Input Capacitance VGS=0V - 1790 2860 pF Coss Output Capacitance VDS=-25V - 140 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 98 - pF Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-2A, VGS=0V - - -1.2 V t rr Reverse Recovery Time 2 IS=-2.7A, VGS=0V, - 80 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 320 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle <2%. 3.Surface-mounted on 1 in 2 copper pad on FR4 board; 125°C/W when mounted on minimum copper pad. ±100 SSM9585GM SOURCE-DRAIN DIODE |
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