SSM9510GM datasheet(2/8 Pages) SSC

Part #	SSM9510GM

Description	N- and P-channel Enhancement-mode Power MOSFETs

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Manufacturer	SSC [Silicon Standard Corp.]

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SSM9510GM

2/10/2005 Rev.2.01

N-channel Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

30

-

V

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

-

0.02

-

V/°C

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V, ID=5A

-

28

m

Ω

VGS=4.5V, ID=3A

-

40

m

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1

-

3

V

gfs

Forward Transconductance

VDS=10V, ID=5A

-

4.6

-

S

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=30V, VGS=0V

-

1

uA

Drain-Source Leakage Current (Tj=70

oC)

VDS=24V, VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS=±20V

-

nA

Qg

Total Gate Charge

2

ID=6.9A

-

10

16

nC

Qgs

Gate-Source Charge

VDS=24V

-

2

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

-

6

-

nC

td(on)

Turn-on Delay Time

2

VDS=15V

-

8

-

ns

tr

Rise Time

ID=1A

-

7

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω , VGS=10V

-

20

-

ns

tf

Fall Time

RD=15Ω

-

6

-

ns

Ciss

Input Capacitance

VGS=0V

-

540

870

pF

Coss

Output Capacitance

VDS=25V

-

160

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

120

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

VSD

Forward On Voltage

2

IS=1.7A, VGS=0V

-

1.2

V

trr

Reverse Recovery Time

IS=6.9A, VGS=0V

-

20

-

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-

11

-

nC

±100

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