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SSM9435K Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM9435K Datasheet(HTML) 2 Page - Silicon Standard Corp. |
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2 / 4 page  www.SiliconStandard.com 2 of 4 SSM9435K Rev.1.01 5/25/2004 Electrical Characteristics @ Tj=25 oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V ∆BV DSS/ ∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA - -0.02 - V/°C RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-5.3A - - 50 m Ω VGS=-4.5V, ID=-4.2A - - 100 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5.3A - 10 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=-5.3A - 9.2 16 nC Qgs Gate-Source Charge VDS=-24V - 2.8 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5.2 - nC td(on) Turn-on Delay Time 2 VDS=-15V - 11 - ns tr Rise Time ID=-1A - 8 - ns td(off) Turn-off Delay Time RG=6Ω ,VGS=-10V - 25 - ns tf Fall Time RD=15Ω -17 - ns Ciss Input Capacitance VGS=0V - 507 912 pF Coss Output Capacitance VDS=-15V - 222 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 158 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-2.3A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-5.3A, VGS=0V, - 29 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 120 °C/W when mounted on Min. copper pad. ± 25V ±100 |
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