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SSM6679M Datasheet(PDF) 4 Page - Silicon Standard Corp.

Part # SSM6679M
Description  P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM6679M Datasheet(HTML) 4 Page - Silicon Standard Corp.

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Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
www.SiliconStandard.com
4 of 4
SSM6679M
Rev.2.02 4/06/2004
100
1000
10000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
020
40
60
80
Q G , Total Gate Charge (nC)
I D = - 14 A
V DS = -24V
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform


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