SSM4575M datasheet(6/7 Pages) SSC

Part #	SSM4575M

Description	COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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Manufacturer	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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SSM4575M

Rev.1.01 7/05/2004

0

5

10

15

20

25

30

35

40

0123

4567

-V DS , Drain-to-Source Voltage (V)

T A =25

o C

-10V

-7.0V

-5.0V

-4.5V

V G =-3.0V

0

5

10

15

20

25

30

35

40

01

234

56

78

-V DS , Drain-to-Source Voltage (V)

T A = 150

o C

-10V

-7.0V

-5.0V

-4.5V

V G =-3.0V

60

65

70

75

80

2468

10

-V GS ,Gate-to-Source Voltage (V)

I D =-3 A

T A =25°C

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50

0

50

100

150

T j , Junction Temperature (

o C)

I D =-4 A

V G =-10V

0.3

0.6

0.8

1.1

1.3

1.6

-50

0

50

100

150

T j , Junction Temperature (

o C)

0

1

2

3

4

0

0.2

0.4

0.6

0.8

1

1.2

-V SD , Source-to-Drain Voltage (V)

T j =25

o C

T j =150

o C

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance vs. Gate Voltage

Fig 4. Normalized On-Resistance

vs. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage vs.

Reverse Diode

Junction Temperature

P-channel

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