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SSM4502GM Datasheet(PDF) 10 Page - Silicon Standard Corp. |
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SSM4502GM Datasheet(HTML) 10 Page - Silicon Standard Corp. |
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10 / 13 page  02/13/2008 Rev.1.00 www.SiliconStandard.com 10 P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 0 3 6 9 12 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Q G , Total Gate Charge (nC) I D = -5A V DS = -16V 10 100 1000 10000 1 5 9 1317 2125 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135 oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse SSM4502GM |
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