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P-channel Enhancement-mode Power MOSFET

Low gate-charge

-30V

Simple drive requirement

75m

Ω

Fast switching

-3.7A

DESCRIPTION

The SSM2309GN is in a SOT-23-3 package, which is widely used for lower

power commercial and industrial surface mount applications. It is well suited

for low voltage applications such as DC/DC converters and and general

G

D

S

ABSOLUTE MAXIMUM RATINGS

Symbol

Units

V

V

A

W/°C

Symbol

Value

Unit

Rthj-a

Thermal Resistance, Junction-ambient

3

Max.

90

°C/W

Parameter

Rating

Drain-Source Voltage

-30

Gate-Source Voltage

Continuous Drain Current

3

-3.7

A

Continuous Drain Current

3

-3

A

Pulsed Drain Current

1,2

-12

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.01

Storage Temperature Range

Total Power Dissipation

1.38

W

-55 to 150

°C

THERMAL DATA

Parameter

± 20

Pb-free; RoHS compliant.

D

G

S

SOT-23-3

switching applications.

SSM2309GN

2/16/2005 Rev.2.1