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SSM2309GN Datasheet(PDF) 1 Page - Silicon Standard Corp. |
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SSM2309GN Datasheet(HTML) 1 Page - Silicon Standard Corp. |
1 / 5 page www.SiliconStandard.com 1 of 5 P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V Simple drive requirement R DS(ON) 75m Ω Fast switching ID -3.7A DESCRIPTION The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. It is well suited for low voltage applications such as DC/DC converters and and general G D S ABSOLUTE MAXIMUM RATINGS Symbol Units VDS V VGS V ID @ TA=25°C ID @ TA=70°C IDM A PD @ TA=25°C W/°C TSTG TJ Symbol Value Unit Rthj-a Thermal Resistance, Junction-ambient 3 Max. 90 °C/W Parameter Rating Drain-Source Voltage -30 Gate-Source Voltage Continuous Drain Current 3 -3.7 A Continuous Drain Current 3 -3 A Pulsed Drain Current 1,2 -12 Operating Junction Temperature Range -55 to 150 °C Linear Derating Factor 0.01 Storage Temperature Range Total Power Dissipation 1.38 W -55 to 150 °C THERMAL DATA Parameter ± 20 Pb-free; RoHS compliant. D G S SOT-23-3 switching applications. SSM2309GN 2/16/2005 Rev.2.1 |
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