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SSM2307GN Datasheet(PDF) 1 Page - Silicon Standard Corp. |
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SSM2307GN Datasheet(HTML) 1 Page - Silicon Standard Corp. |
1 / 5 page P-CHANNEL ENHANCEMENT MODE POWER MOSFET 08/02/2007 Rev.1.00 www.SiliconStandard.com 1 SSM2307GN PRODUCT SUMMARY Simple Drive Requirement Small Package Outline Surface Mount Device DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ABSOLUTE MAXIMUM RATINGS G D S D G S SOT-23 BVDSS -16V RDS(ON) 60mΩ ID - 4A Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Rating -16 ±8 -4 0.01 1.38 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 -3.3 Pulsed Drain Current 1 -12 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Linear Derating Factor THERMAL DATA Pb-free; RoHS-compliant |
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