P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

08/02/2007 Rev.1.00

www.SiliconStandard.com

1

SSM2307GN

PRODUCT SUMMARY

Simple Drive Requirement

Small Package Outline

Surface Mount Device

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-23 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

ABSOLUTE MAXIMUM RATINGS

G

D

S

D

G

S

SOT-23

-16V

60mΩ

- 4A

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

90

℃/W

Rating

-16

±8

-4

0.01

1.38

-55 to 150

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Continuous Drain Current

3

-3.3

Pulsed Drain Current

1

-12

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

-55 to 150

Linear Derating Factor

THERMAL DATA

Pb-free; RoHS-compliant