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SSM2307GN Datasheet(PDF) 4 Page - Silicon Standard Corp. |
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SSM2307GN Datasheet(HTML) 4 Page - Silicon Standard Corp. |
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4 / 5 page  08/02/2007 Rev.1.00 www.SiliconStandard.com 4 SSM2307GN Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1ms 10ms 100ms 1s DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃ ℃ ℃/W t T 0 2 4 6 8 0 8 16 24 32 Q G , Total Gate Charge (nC) I D =-4A V DS =-16V 100 1000 10000 15 9 13 17 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss |
Similar Part No. - SSM2307GN |
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Similar Description - SSM2307GN |
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