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SSM2305GN Datasheet(PDF) 3 Page - Silicon Standard Corp.

Part # SSM2305GN
Description  P-channel Enhancement-mode Power MOSFET
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM2305GN Datasheet(HTML) 3 Page - Silicon Standard Corp.

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SSM2305GN
2/16/2005 Rev.2.1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage vs.
Reverse Diode
Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D = -4.2A
V GS = -4.5V
0
10
20
30
40
02
46
8
10
-V DS , Drain-to-Source Voltage (V)
-4.0V
T A =25
o C
-5.0V
-3.0V
V G = -2.0V
0
4
8
12
16
20
24
28
32
36
02468
-V DS , Drain-to-Source Voltage (V)
V G = -2.0V
-4.0V
-5.0V
-3.0V
T A = 150
o C
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
-V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
0
0.5
1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
40
80
120
160
01
234
56
-V GS , Gate-to-Source Voltage (V)
I D =-4.2A
T A =25
o C


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