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SSM09N90GW Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM09N90GW Datasheet(HTML) 2 Page - Silicon Standard Corp. |
2 / 5 page ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-source breakdown voltage VGS=0V, ID=1mA 900 - - V ∆BV DSS/ ∆Tj Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA - 0.67 - V/°C RDS(ON) Static drain-source on-resistance VGS=10V, ID=4.5A - - 1.2 Ω VGS(th) Gate threshold voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward transconductance VDS=10V, ID=4.5A - 11.5 - S IDSS Drain-source leakage current V DS=900V, VGS=0V - - 10 uA VDS=720V ,VGS=0V, Tj = 125°C - - 100 uA IGSS Gate-source leakage current VGS=±30V - - ±100 nA Qg Total gate charge 2 ID=8.6A - 67.1 120 nC Qgs Gate-source charge VDS=540V - 17 - nC Qgd Gate-drain ("Miller") charge VGS=10V - 19.9 - nC td(on) Turn-on delay time 2 VDS=450V - 25.8 - ns tr Rise time ID=5A - 10.3 - ns td(off) Turn-off delay time RG=10Ω , VGS=10V - 305 - ns tf Fall time RD=90Ω - 536 - ns Ciss Input capacitance VGS=0V - 4087 6000 pF Coss Output capacitance VDS=25V - 221 - pF Crss Reverse transfer capacitance f=1.0MHz - 51 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward voltage 2 IS=8.6A, VGS=0V - - 1.5 V IS Continuous source current ( body diode ) VD=VG=0V, VS=1.5V - 8.6 A ISM Pulsed source current (body diode )1 - - 3 A www.SiliconStandard.com 2 of 5 SSM09N90GW 8/31/2006 Rev.3.1 |
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