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SSM09N90CGW Datasheet(PDF) 1 Page - Silicon Standard Corp. |
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SSM09N90CGW Datasheet(HTML) 1 Page - Silicon Standard Corp. |
1 / 5 page www.SiliconStandard.com 1 of 5 N-channel Enhancement-mode Power MOSFET BVDSS 900V RDS(ON) 1.4 Ω I D 7.6A The SSM09N90CGW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC Pb-free; RoHS-compliant TO-247 PRODUCT SUMMARY DESCRIPTION Notes: 1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width <300us, duty cycle <2%. 3. Starting Tj=25°C, VDD=50V , L=6.8mH , RG=25Ω , IAS=6A. converters and offline power supplies. The SSM09N90CGW is in a TO-247 (TO-3P) package, which is widely used for commercial and industrial applications, where the greater pin spacing is needed to meet safety specifications. The through-hole package is suitable for vertical mounting, where a small footprint G D S TO-247 (suffix W) is required on the board, and/or an external heatsink is to be attached. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units VDS VGS V ID IDM A PD W/°C EAS Single pulse avalanche energy 3 mJ TSTG TJ Symbol Parameter Value Units RΘJC Maximum thermal resistance, junction-case 0.6 °C/W RΘJA Maximum thermal resistance, junction-ambient 40 °C/W Drain-source voltage 900 V Gate-source voltage ±30 Continuous drain current, TC = 25°C 7.6 A TC = 100°C 4.8 A Pulsed drain current 1 25 Total power dissipation, TC = 25°C 208 W -55 to 150 °C Operating junction temperature range -55 to 150 °C Linear derating factor 1.6 120 THERMAL CHARACTERISTICS Storage temperature range SSM09N90CGW 8/28/2006 Rev.3.1 IAS Avalanche current 6 A |
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