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N-channel Enhancement-mode Power MOSFET

900V

1.4

Ω

7.6A

The SSM09N90CGW acheives fast switching performance

with low gate charge without a complex drive circuit. It is

suitable for high voltage applications such as AC/DC

Pb-free; RoHS-compliant TO-247

PRODUCT SUMMARY

DESCRIPTION

Notes:

1. Pulse width must be limited to avoid exceeding the safe operating area.

2. Pulse width <300us, duty cycle <2%.

converters and offline power supplies.

The SSM09N90CGW is in a TO-247 (TO-3P) package,

which is widely used for commercial and industrial

applications, where the greater pin spacing is needed

to meet safety specifications. The through-hole package

is suitable for vertical mounting, where a small footprint

G

D

S

TO-247 (suffix W)

is required on the board, and/or an external heatsink is

to be attached.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Units

V

A

W/°C

Single pulse avalanche energy

3

mJ

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-case

0.6

°C/W

Maximum thermal resistance, junction-ambient

40

°C/W

Drain-source voltage

900

V

Gate-source voltage

±30

7.6

A

4.8

A

Pulsed drain current

1

25

208

W

-55 to 150

°C

Operating junction temperature range

-55 to 150

°C

Linear derating factor

1.6

120

THERMAL CHARACTERISTICS

Storage temperature range

SSM09N90CGW

8/28/2006 Rev.3.1

Avalanche current

6

A