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SS8047GT53TB Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SS8047GT53TB Datasheet(HTML) 2 Page - Silicon Standard Corp. |
2 / 11 page www.SiliconStandard.com 2 of 11 Rev.2.02 7/06/2004 SS8047 Absolute Maximum Ratings (Note 1) Input Voltage…………………………………....................................................................…..…..…7V Power Dissipation Internally Limited (Note 2) Maximum Junction Temperature…..……………............................................................…….…..150°C Storage Temperature Range….……......................................................................................…..-65°C ≤ T J ≤+150°C Lead Temperature, Time for Wave Soldering TO 220 Package………………………….........................................................................…………260°C, 10s TO 252, TO 263, SOT 223 Package…………......................................................................…...260°C, 4s Continuous Power Dissipation (TA = + 25°C) SOT 223 (1) ………………………................................................................…….….……….………..0.8W TO 252 (1) ………..……………................................................................……….……….….………..1.0W TO 263 (1) ………..……………….………................................................................…….….………..1.6W Note (1): See Recommended Minimum Footprint. Operating Conditions (Note 1) Input Voltage…………………………….....................................................................…………….3.3V~6V Temperature Range………………...............................................................................…………0°C ≤ T J ≤125°C Electrical Characteristics VIN =5V, IO = 1A, CIN = 1µF, COUT =10 µF, All specifications apply for TA = TJ = 25°C. [Note 3] PARAMETER CONDITIONS MIN TYP MAX UNITS VIN = 5V, 10mA < IO < 1A Output Voltage VIN = 3.3V, 10mA < IO < 500mA 2.475 2.50 2.575 V Line Regulation 3.3V < VIN < 6V, IO = 10mA 3 30 mV VIN = 5V, 10mA < IO < 1A 35 50 mV Load Regulation VIN = 3.3V, 10mA < IO < 500mA 25 mV Output Impedance 200mA DC and 100mA AC, fo = 120Hz 80 m Ω Quiescent Current VIN = 5V 0.6 mA Ripple Rejection fi = 120Hz,Vripple =2VP-P, Io = 100mA 46 dB IO = 1A 1.15 V IO = 500mA 420 mV Dropout Voltage IO = 100mA 200 mV Short Circuit Current 1.6 A Over Temperature 150 °C Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Con- ditions are conditions under which the device functions but the specifications might not be guaranteed. For guaranteed specifications and test conditions see the Electrical Characteristics. Note 2: The maximum power dissipation is a function of the maximum junction temperature, TJmax ; total thermal resistance, θ JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient temperature is Tjmax-TA / θ JA. If this dissipation is exceeded, the die temperature will rise above 150°C and IC will go into thermal shutdown. For the SS8047 in SOT 223 package, θ JA is 156°C/W; in TO 263 package, θ JA is 75°C/W, and in the TO 252 package, θ JA is 125°C/W (See recommend minimum foot- print). The safe operation in SOT 223,TO 252 & TO 263 package, it can see “Typical Performance Characteristics” (Safe Operating Area). Note3: Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. Note4: The type of output capacitor should be tantalum or aluminum. |
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