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SPGX0365A Datasheet(PDF) 7 Page - SemiHow Co.,Ltd. |
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SPGX0365A Datasheet(HTML) 7 Page - SemiHow Co.,Ltd. |
7 / 10 page ◎ SEMIHOW REV.PLIMILARY”DEC 2009 I D, Drain Current [A] V GS, Gate-Source Voltage [V] Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 -1 10 0 10 1 0 200 400 600 800 1000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 10 0 10 1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V * Notes : 1. 250us Pulse Test 2. T C = 25 oC V DS, Drain-Source Voltage [V] (SPGN0365A) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 25 oC 150 oC * Note : 1. V GS = 0V 2. 250 µs Pulse Test V SD , Source-Drain Voltage [V] 0 3 6 9 12 15 0 2 4 6 8 10 12 V DS = 325V V DS = 130V V DS = 520V * Note : I D = 3.0A Q G, Total Gate Charge [nC] |
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