◎ SEMIHOW REV.A0,Mar 2010

BV

R

I

 Originative New Design

 Superior Avalanche Rugged Technology

 Robust Gate Oxide Technology

 Very Low Intrinsic Capacitances

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 10.5 nC (Typ.)

 Extended Safe Operating Area

 Lower R

 100% Avalanche Tested

FEATURES

Absolute Maximum Ratings

T

HFD5N65S / HFU5N65S

650V N-Channel MOSFET

Mar 2010

1.Gate 2. Drain 3. Source

2

1

2

3

1

3

D-PAK

I-PAK

HFD5N65S

HFU5N65S

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

650

V

I

D

Drain Current

– Continuous (T

4.0

A

Drain Current

– Continuous (T

2.3

A

I

DM

Drain Current

– Pulsed

(Note 1)

16.0

A

V

GS

Gate-Source Voltage

±30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

180

mJ

I

AR

Avalanche Current

(Note 1)

4.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

9.1

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

2.5

W

Power Dissipation (T

- Derate above 25℃

91

W

0.73

W/℃

T

Operating and Storage Temperature Range

-55 to +150

℃

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

--

1.37

℃/W

Junction-to-Ambient*

--

50

Junction-to-Ambient

--

110

* When mounted on the minimum pad size recommended (PCB Mount)