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HFD4N50 Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HFD4N50 Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 8 page ◎ SEMIHOW REV.A0,July 2005 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=68mH, I AS=3.4A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. I SD≤2.6A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Electrical Characteristics T C=25 °C unless otherwise specified I S Continuous Source-Drain Diode Forward Current -- -- 2.6 A I SM Pulsed Source-Drain Diode Forward Current -- -- 10.4 V SD Source-Drain Diode Forward Voltage I S = 2.6 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time I S = 3.4 A, VGS = 0 V di F/dt = 100 A/μs (Note 4) -- 220 -- ㎱ Qrr Reverse Recovery Charge -- 1.3 -- μC Symbol Parameter Test Conditions Min Typ Max Units V GS Gate Threshold Voltage V DS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 1.3 A -- 2.0 2.7 Ω On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 ㎂ 500 -- -- V ΔBV DSS /ΔT J Breakdown Voltage Temperature Coefficient I D = 250 ㎂, Referenced to25℃ -- 0.38 -- V/℃ I DSS Zero Gate Voltage Drain Current V DS = 500 V, VGS = 0 V -- -- 1 ㎂ V DS = 400 V, TC = 125℃ -- -- 10 ㎂ I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, VDS = 0 V -- -- 100 ㎁ I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 ㎁ Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 450 590 ㎊ C oss Output Capacitance -- 70 90 ㎊ C rss Reverse Transfer Capacitance -- 10 17 ㎊ Dynamic Characteristics t d(on) Turn-On Time V DS = 250 V, ID = 3.4 A, R G = 25 Ω (Note 4,5) -- 15 30 ㎱ t r Turn-On Rise Time -- 70 140 ㎱ t d(off) Turn-Off Delay Time -- 30 60 ㎱ t f Turn-Off Fall Time -- 40 80 ㎱ Q g Total Gate Charge V DS = 400 V, ID = 3.4 A, V GS = 10 V (Note 4,5) -- 13 17 nC Q gs Gate-Source Charge -- 4.0 -- nC Q gd Gate-Drain Charge -- 6.0 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics |
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