HFC1N70 datasheet(4/7 Pages) SEMIHOW

Part #	HFC1N70

Description	700V N-Channel MOSFET

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

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◎ SEMIHOW REV.A0,Dec 2008

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

※ Notes :

1. Zθ JC(t) = 17 ℃/W Max.

2. Duty Factor, D=t

1/t2

3. T

JM - TC = PDM * Z

θ JC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1, Square Wave Pulse Duration [sec]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 11. Transient Thermal Response Curve

Typical Characteristics (continued)

t

2

t

1

P

DM

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Note :

1. V

GS = 10 V

2. I

D = 0.3 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

* Note :

1. V

GS = 0 V

2. I

D = 250µA

T

J, Junction Temperature [

oC]

25

50

75

100

125

150

0.0

0.1

0.2

0.3

0.4

0.5

T

C, Case Temperature [

oC]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

100 ms

100

µs

DC

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

* Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

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HFC1N70 Datasheet(PDF) 4 Page - SemiHow Co.,Ltd.

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