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SB1040F Datasheet(PDF) 1 Page - Won-Top Electronics |
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SB1040F Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 3 page SB1020F – SB10100F 1 of 3 © 2002 Won-Top Electronics SB1020F – SB10100F 10A ISOLATION SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip B ! Guard Ring for Transient Protection ! High Current Capability, Low Forward C ! Low Reverse Leakage Current ! High Surge Current Capability G A ! Plastic Material has UL Flammability Classification 94V-O PIN1 2 D Mechanical Data F E ! Case: ITO-220A Full Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-202, Method 208 ! Polarity: See Diagram I ! Weight: 2.24 grams (approx.) L ! Mounting Position: Any H ! Marking: Type Number PIN 1 + J PIN 2 - K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB 1020F SB 1030F SB 1040F SB 1050F SB 1060F SB 1080F SB 10100F Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 80 100 V RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 V Average Rectified Output Current @TC = 95°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 10A VFM 0.55 0.75 0.85 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 50 mA Typical Junction Capacitance (Note 1) Cj 700 pF Typical Thermal Resistance Junction to Case (Note 2) RJC 3.5 K/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Thermal resistance junction to case mounted on heatsink. WTE POWER SEMICONDUCTORS ITO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm |
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