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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

Data Sheet

SH8M2

P-ch



Electrical characteristics (Ta=25

C)

Parameter

Symbol

Min.

−

Typ.

Max.

Unit

Conditions

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−

±10

−30

−−

−−

−1

−1.0

−−2.5

V

−

65

90

−

100

140

m

Ω

m

Ω

m

Ω

−

120

165

1.8

−−

−

490

−

pF

−10V

−

110

75

−

pF

−

10

−

pF

f=1MHz

−

15

−

ns

−

35

−

ns

−

10

−

ns

−

5.5

−

ns

−

1.5

7.7

nC

−

2.0

−

nC

−3.5A

−−

nC

−15V

−1.75A

−10V

Ω

Ω



Body diode characteristics (Source-Drain) (Ta=25

C)

−−

−1.2

V

Forward voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗Pulsed

∗