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2009.03 - Rev.A

2.5V Drive Nch MOSFET

RTF015N03

Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low On-resistance.

2) Space saving, small surface mount package (TUMT3).

3) Low voltage drive (2.5V drive).

Applications

Switching

Packaging specifications

Inner circuit

Package

Code

Taping

Basic ordering unit (pieces)

RTF015N03

TL

3000

Type

Absolute maximum ratings (Ta=25

°C)

∗1

∗2

∗1

Parameter

V

Symbol

V

A

A

A

A

W

°C

Tch

°C

Tstg

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Source current

(Body diode)

30

150

−55 to +150

12

±1.5

±6.0

0.6

6.0

0.8

Thermal resistance

Parameter

°C/W

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

156

∗ Mounted on a ceramic board

∗

(1) Gate

(2) Source

(3) Drain

TUMT3

0.3

0.77

0.17

2.0

1.3

0.65 0.65

(3)

(1)

(2)

0~0.1

0.85Max.

Abbreviated symbol : PP

(1) Gate

(2) Source

(3) Drain

∗2

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗1

(2)

(1)

(3)