Schottky barrier diode

RB095T-90



Applications



Dimensions (Unit : mm)



Structure

Switching power supply



Features

1) Cathode common type.

(TO-220)

3) High reliability



Construction

Silicon epitaxial planer



Absolute maximum ratings (Ta=25°C)

Symbol

Unit

Reverse voltage (repetitive peak)

V

V

Average rectified forward current (*1)

Io

A

Forward current surge peak (60Hz / 1cyc) (*1)

A

Tj

C

Tstg

C

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=127

C



Electrical characteristic (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

-

-

0.75

V

Reverse current

-

-

150

A

Thermal impedance

jc

-

-

1.75

C/W

junction to case

6

100

Junction temperature

150

Parameter

Limits

90

Reverse voltage (DC)

90

Storage temperature

-40 to +150

Conditions

Parameter

(1) (2) (3)

9

1/3

2010.02 - Rev.D

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