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IMX25 Datasheet(PDF) 1 Page - Rohm |
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IMX25 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page 1/3 www.rohm.com ○ c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.B General purpose transistor (isolated dual transistors) IMX25 Features Dimensions (Unit : mm) 1) Two 2SD2704K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent,eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. Absolute maximum ratings (Ta=25 C) Inner circuit Electrical characteristics (Ta=25 C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Min. 50 20 25 − − 820 − − − − − − − 50 − − − 0.1 0.1 2700 100 V IC =10μA IC =1mA IE =10μA VCB =50V VEB =25V VCE =2V, IC=4mA IC/IB =30mA/3mA V V μA μA − mV Typ. Max. Unit Conditions fT Ron Cob − − − 35 0.7 3.9 − − − VCE =6V, IE=−4mA, f=10MHz IB =5mA, Vi=100mVrms, f=1kHz VCB =10V, IE=0A, f=1MHz MHz Ω pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Output On-resistance Collector-emitter saturation voltage Packaging specifications IMX25 Part No. T110 3000 Packaging type Code Basic ordering unit (pieces) Taping ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X25 (1) (2) (3) 0.3 + 0.1 −0.05 (6) (5) (4) 0.95 0.95 1.9±0.2 2.9±0.2 1.1+0.2 0.8±0.1 −0.1 0 to 0.1 0.15 −0.06 +0.1 All terminals have same dimensions Parameter Symbol Limits Unit VCBO 50 V VCEO 20 V VEBO 25 V IC 300 mA Tj 150 °C Tstg −55 to +150 °C Pd 300(TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗ 200mW per element must not be exceeded. Tr2 Tr1 (4) (5) (6) (3) (2) (1) |
Similar Part No. - IMX25_10 |
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Similar Description - IMX25_10 |
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