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2010 ROHM Co., Ltd. All rights reserved.

2010.02 - Rev.B

General purpose transistor

(isolated dual transistors)

IMX25



Features



Dimensions (Unit : mm)

1) Two 2SD2704K chips in a SMT package.

2) Mounting possible with SMT3 automatic mounting machine.

3) Transistor elements are independent,eliminating interference.

4) Mounting cost and area can be cut in half.



Structure

Epitaxial planar type

NPN silicon transistor



Absolute maximum ratings (Ta=25

C)



Inner circuit



Electrical characteristics (Ta=25

C)

Parameter

Symbol

Min.

50

20

25

−

−

820

−

−

−

−

−

−

−

50

−

−

−

0.1

0.1

2700

100

V

=10μA

=1mA

=10μA

=50V

=25V

=30mA/3mA

V

V

μA

μA

−

mV

Typ.

Max.

Unit

Conditions

Ron

Cob

−

−

−

35

0.7

3.9

−

−

−

MHz

Ω

pF

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Output capacitance

Output On-resistance

Collector-emitter saturation voltage



Packaging specifications

IMX25

Part No.

T110

3000

Packaging type

Code

Basic ordering unit (pieces)

Taping

ROHM : SMT6

EIAJ : SC-74

Abbreviated symbol: X25

(1)

(2)

(3)

0.3 +

0.1

−0.05

(6)

(5)

(4)

0.95 0.95

1.1+0.2

−0.1

0 to 0.1

0.15 −0.06

+0.1

All terminals have same dimensions

Parameter

Symbol

Limits

Unit

50

V

20

V

25

V

300

mA

Tj

150

°C

Tstg

−55 to +150

°C

Pd

300(TOTAL)

mW

∗

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Power dissipation

(4)

(5)

(6)

(3)

(2)

(1)