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DTB723YE Datasheet(PDF) 1 Page - Rohm

Part No. DTB723YE
Description  -200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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DTB723YE Datasheet(HTML) 1 Page - Rohm

   
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2009 ROHM Co., Ltd. All rights reserved.
2009.10 - Rev.C
-200mA / -30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTB723YE / DTB723YM
Applications
Dimensions (Unit : mm)
Inverter, Interface, Driver
Feature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors
(see equivalent circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing of the input.
They also have the advantage
of almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
Packaging specifications
EMT3
VMT3
DTB723YE
Part No.
DTB723YM
TL
3000
T2L
8000
Package
Packaging type
Taping
Taping
Code
Basic ordering
unit (pieces)
Absolute maximum ratings (Ta=25
°C)
Inner circuit
Parameter
Symbol
VCC
−30
−15 to +5
−200
150
150
−55 to +150
DTB723YE DTB723YM
V
VIN
V
mA
mW
IC (max)
PD
Tj
Tstg
Unit
C
C
Limits
∗1
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
∗2
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
1.6
0.7
0.15
0.55
0.2
1.0
0.3
(2)
0.5
0.5
(3)
0.2
(1)
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4 0.4
(2)
(1)
VMT3
(1) GND
(2) IN
(3) OUT
(1) IN
(2) GND
(3) OUT
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
DTB723YE
DTB723YM
Abbreviated symbol : M52
Abbreviated symbol : M52
Each lead has same dimensions
Each lead has same dimensions
R1
R1=2.2k
Ω / R2=10kΩ
R2
IN
GND(+)
OUT
IN
GND(+)
OUT


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