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1N4006-TB Datasheet(PDF) 1 Page - Won-Top Electronics |
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1N4006-TB Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 3 page 1N4001 – 1N4007 1 of 3 © 2002 Won-Top Electronics 1N4001 – 1N4007 1.0A SILICON RECTIFIER Features ! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability A B A ! High Reliability ! High Surge Current Capability Mechanical Data C ! Case: Molded Plastic D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.35 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol 1N 4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current (Note 1) @TA = 75°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 1.0 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 50 µA Typical Junction Capacitance (Note 2) Cj 15 pF Typical Thermal Resistance Junction to Ambient (Note 1) RJA 50 K/W Operating Temperature Range Tj -65 to +125 °C Storage Temperature Range TSTG -65 to +150 °C *Glass passivated forms are available upon request Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C. WT E PO W E R SEM IC O ND UC TO R S DO-41 Dim Min Max A 25.4 — B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm |
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