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FGL35N120FTD Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # FGL35N120FTD
Description  1200V, 35A Trench IGBT
Download  9 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGL35N120FTD Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FGL35N120FTD Rev. A
Package Marking and Ordering Information
Electrical Characteristics of the IGBT T
C = 25°C unless otherwise noted
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGL35N120FTD
FGL35N120FTDTU
TO-264
-
-
30
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
1200
-
-
V
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±250
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 35mA, VCE = VGE
3.5
6.2
7.5
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 35A, VGE = 15V
-1.68
2.2
V
IC = 35A, VGE = 15V,
TC = 125
oC
-2.0
-
V
Dynamic Characteristics
Cies
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
5090
-
pF
Coes
Output Capacitance
-
180
-
pF
Cres
Reverse Transfer Capacitance
-
95
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 600V, IC = 35A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25
oC
-34
-
ns
tr
Rise Time
-
63
-
ns
td(off)
Turn-Off Delay Time
-
172
-
ns
tf
Fall Time
-
107
-
ns
Eon
Turn-On Switching Loss
-
2.5
-
mJ
Eoff
Turn-Off Switching Loss
-
1.7
-
mJ
Ets
Total Switching Loss
-
4.2
-
mJ
td(on)
Turn-On Delay Time
VCC = 600V, IC = 35A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125
oC
-33
-
ns
tr
Rise Time
-
66
-
ns
td(off)
Turn-Off Delay Time
-
180
-
ns
tf
Fall Time
-
146
-
ns
Eon
Turn-On Switching Loss
-
3.1
-
mJ
Eoff
Turn-Off Switching Loss
-
2.1
-
mJ
Ets
Total Switching Loss
-
5.2
-
mJ
Qg
Total Gate Charge
VCE = 600V, IC = 35A,
VGE = 15V
-
210
-
nC
Qge
Gate to Emitter Charge
-
42
-
nC
Qgc
Gate to Collector Charge
-
101
-
nC


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