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FGL35N120FTD Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FGL35N120FTD
Description  1200V, 35A Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGL35N120FTD Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGL35N120FTD Rev. A
February 2010
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
± 25
V
IC
Collector Current
@ TC = 25
oC
70
A
Collector Current
@ TC = 100
oC
35
A
ICM (1)
Pulsed Collector Current
@ TC = 25
oC
105
A
IF
Diode Continuous Forward Current
@ TC = 100
oC
40
A
PD
Maximum Power Dissipation
@ TC = 25
oC368
W
Maximum Power Dissipation
@ TC = 100
oC147
W
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
oC
Symbol
Parameter
Ratings
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
0.34
oC/W
RθJC(Diode)
Thermal Resistance, Junction to Case
0.9
oC/W
RθJA
Thermal Resistance, Junction to Ambient
25
oC/W
FGL35N120FTD
1200V, 35A Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35A
• High Input Impedance
Applications
• Induction Heating And Microwave Oven
• Soft Switching Applications
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
G
E
C


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