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2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.B

TO-220FM

(1)Base

(2)Collector

(3)Emitter

4.5

2.8

0.75

φ3.2

(2)(3)

(1)

0.8

2.54

2.6

2.54

1.3

1.2

10.0

∗1 Body Diode

(1) Gate

(2) Drain

(3) Source

∗1

(1)

(2)

(3)

10V Drive Nch MOSFET

R6008ANX

Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

±30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

Applications

Switching

Packaging specifications

Inner circuit

Package

Code

Basic ordering unit (pieces)

−

500

Bulk

R6008ANX

Type

Absolute maximum ratings (Ta=25

°C)

Parameter

Range of storage temperature

Channel temperature

Total power dissipation (Tc=25

°C)

Drain current

Gate-source voltage

Drain-source voltage

Tch

600

V

V

A

W

°C

±30

±8

Continuous

Pulsed

A

±32

50

150

Tstg

°C

−55 to +150

Avalanche Energy

Avalanche Current

4

4.3

Symbol

Limits

Unit

∗1 Pw≤10µs, Duty cycle≤1%

∗3 Limited only by maximum tempterature allowed

∗1

∗3

∗3

A

A

A

mJ

Continuous

Pulsed

8

32

Source current

(Body Diode)

∗1

∗2

∗2

Thermal resistance

Parameter

°C/W

Rth(ch-c)

Symbol

Limits

Unit

Channel to case

2.5