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SD1015 Datasheet(PDF) 1 Page - Microsemi Corporation |
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SD1015 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page SD1015 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. . DESCRIPTION: The SD1015 is a 28V gold metallized epitaxial silicon NPN planar transistor designed for 108–152MHz FM applications. This device utilizes diffused emitter resistors to achieve infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36.0 V VCEO Collector-Emitter Voltage 18.0 V VCES Collector-Emitter Voltage 36.0 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current 1.0 A PTOT Total Power Dissipation 10.0 W TSTG Storage Temperature – 65 to + 150 °C TJ Junction Temperature +200 °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 4.4 °C/W Revision B – June 2008 Features • FM CLASS C TRANSISTOR • FREQUENCY 150 MHz • POWER OUT 30W • POWER GAIN 10dB • GOLD METALLIZATION • COMMON EMITTER RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS |
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