NX2305CSTR datasheet(3/19 Pages) MICROSEMI

Part #	NX2305CSTR

Description	SINGLE SUPPLY 12V SYNCHRONOUS PWM CONTROLLER WITH NMOS LDO CONTROLLER, POWER GOOD & ENABLES

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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3 / 19 page

NX2305

3

Rev.5.0

08/19/08

N

PARAMETER

SYM

Test Condition

Min

TYP

MAX

Units

VBST Supply Current

(Dynamic)

VBST

(dynamic)

CL=3300PF

9.2

mA

Under Voltage Lockout

V

CC-Threshold

V

CC_UVLO

V

CC Rising (NOTE1)

6.8

V

VCC hysterises

VCC Falling (NOTE1)

300

mV

Oscillator (Rt)

Frequency

F

S

300

KHz

Ramp-Amplitude Voltage

VRAMP

1.1

V

Max Duty Cycle

94

%

Min duty Cycle

0

%

Error Amplifiers

Open Loop Gain

50

65

dB

Transconductance

gm

2000

umho

Comp SD threshold

0.2

V

Input Bias Current

Ib

100

nA

EN & SS

Soft Start time

Tss

6.8

mS

Enable HI Threshold

V

ENTHH

1.24

V

Enable Hysterises

VENTHL

30

mV

High Side Driver, Hdrv, BST,

SW (C

L=3300pF)

Rise Time

THdrv(Rise)

10% to 90%

30

ns

Fall Time

THdrv(Fall)

90% to 10%

20

ns

Low Side Driver , Ldrv,

PVcc, Pgnd(C

L=3300pF)

Output Impedance, Sourcing

Current

Rsource(Ldrv)

I=200mA

2.2

ohm

Output Impedance, Sinking

Current

Rsink(Ldrv)

I=200mA

1

ohm

Rise Time

TLdrv(Rise)

10% to 90%

30

ns

Fall Time

TLdrv(Fall)

90% to 10%

20

ns

LDO Controller

FB Pin- Bias Current

1

uA

High Output Voltage

11.1

V

Low Output Voltage

0.2

V

High Output Source Current

1.9

mA

Output Impedance , Sourcing

Current

Rsource(Hdrv)

I=200mA

Tdead(L to

H)

Deadband Time

Ldrv going Low to Hdrv going

High, 10% to 10%

Deadband Time

Tdead(H to

L)

SW going Low to Ldrv going

High, 10% to 10%

50

ns

50

ns

ohm

3.6

1

ohm

Output Impedance , Sinking

Current

Rsink(Hdrv)

I=200mA

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