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DXT2012P5-13 Datasheet(PDF) 4 Page - Diodes Incorporated |
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DXT2012P5-13 Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  DXT2012P5 Document number: DS32070 Rev. 2 - 2 4 of 7 www.diodes.com March 2010 © Diodes Incorporated DXT2012P5 PowerDI is a registered trademark of Diodes A Product Line of Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -100 -120 − V IC = -100μA Collector-Emitter Breakdown Voltage (Note 7) V(BR)CEO -60 -80 − V IC = -10mA Emitter-Base Breakdown Voltage V(BR)EBO -7 -8.1 − V IE = -100μA Collector Cutoff Current ICBO − <1 − -20 -0.5 nA μA VCB = -80V VCB = -80V, Tamb = 100 °C Collector Cutoff Current ICER R ≤1kΩ − <1 − -20 -0.5 nA μA VCB = -80V VCB = -80V, Tamb = 100 °C Emitter Cutoff Current IEBO − <1 -10 nA VEB = -6V Collector-Emitter Saturation Voltage (Note 7) VCE(sat) − − − − -15 -55 -90 -195 -25 -70 -120 -250 mV IC = -0.1A, IB = -10mA IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -5A, IB = -500mA Base-Emitter Saturation Voltage (Note 7) VBE(sat) − -1030 -1150 mV IC = -5A, IB = -500mA Base-Emitter Turn-On Voltage (Note 7) VBE(on) − -920 -1020 mV VCE = -1V, IC = -5A DC Current Gain (Note 7) hFE 100 100 45 10 250 200 90 25 − 300 − − − VCE = -1V, IC = -10mA VCE = -1V, IC = -2A VCE = -1V, IC = -5A VCE = -1V, IC = -10A Transition Frequency fT − 120 − MHz VCE = -10V, IC = -100mA, f = 50MHz Output Capacitance Cobo − 48 − pF VCB = -10V, f = 1MHz Switching Times ton toff − − 39 370 − − ns VCC = 10V, IC = 1A, IB1 = IB2 = -100mA Notes: 7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. |
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