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DXTP19020DP5 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DXTP19020DP5 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  DXTP19020DP5 Document number: DS32012 Rev. 3 - 2 2 of 5 www.diodes.com March 2010 © Diodes Incorporated DXTP19020DP5 A Product Line of Diodes Incorporated PowerDI is a registered trademark of Diodes Incorporated. Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Collector Voltage (Reverse Blocking) VECO -4 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -8 A Base Current IB -1 A Peak Pulse Current ICM -15 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation @ TA = 25°C (Note 4) PD 1.3 W Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C RθJA 96.1 °C/W Power Dissipation @ TA = 25°C (Note 5) PD 3 W Thermal Resistance, Junction to Ambient Air (Note 5) @TA = 25°C RθJA 41.7 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Device mounted on FR-4 PCB, 2 oz. copper, minimum recommended pad layout. 5. Device mounted on FR-4 PCB, 2 oz. copper, collector pad dimensions 0.42inch 2. Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -25 -55 ⎯ V IC = -100μA Collector-Emitter Breakdown Voltage (Note 6) V(BR)CEO -20 -50 ⎯ V IC = -10mA Emitter-Collector Breakdown Voltage (Reverse Blocking) V(BR)ECX -4 -8.6 ⎯ V IE = -100μA, RBC < 1kΩ or 0.25V > VCB > -0.25V Emitter-Base Breakdown Voltage (Reverse Blocking) V(BR)ECO -4 -8.6 ⎯ V IE = -100μA Emitter-Base Breakdown Voltage V(BR)EBO -7 -8.2 ⎯ V IE = -100μA Collector Cutoff Current ICBO ⎯ <1 ⎯ 50 0.5 nA μA VCB = -25V VCB = -25V, Tamb = 100 °C Emitter Cutoff Current IEBO ⎯ <1 -50 nA VEB = -5.6V Collector-Emitter Saturation Voltage (Note 6) VCE(sat) ⎯ -40 -97 -115 -220 -47 -130 -145 -275 mV IC = -1A, IB = -100mA IC = -1A, IB = -10mA IC = -2A, IB = -40mA IC = -8A, IB = -800mA Base-Emitter Saturation Voltage (Note 6) VBE(sat) ⎯ -1050 -1150 mV IC = -8A, IB = -800mA Base-Emitter Turn-On Voltage (Note 6) VBE(on) ⎯ -930 -1000 mV IC = -8A, VCE = -2V DC Current Gain (Note 6) hFE 300 200 45 ⎯ 450 290 70 25 900 ⎯ ⎯ ⎯ ⎯ IC = -100mA, VCE = -2V IC = -2A, VCE = -2V IC = -8A, VCE = -2V IC = -15A, VCE = -2V Transition Frequency fT ⎯ 176 ⎯ MHz IC = -50mA, VCE = -10V, f = 50MHz Input Capacitance (Note 6) Cibo ⎯ ⎯ 400 pF VEB = -0.5V, f = 1MHz Output Capacitance (Note 6) Cobo ⎯ 36 45 pF VCB = -10V, f = 1MHz Delay Time td ⎯ 23 ⎯ ns IC = -1A, VCC = -10V, IB1 = -IB2 = -50mA Rise Time tr ⎯ 18.4 ⎯ Storage Time ts ⎯ 266 ⎯ Fall Time tf ⎯ 49.6 ⎯ Notes: 6. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. |
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