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ARF466A Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. ARF466A
Description  RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

ARF466A Datasheet(HTML) 1 Page - Microsemi Corporation

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MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
200V
300W
45MHz
The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been
optimized for both linear and high efficiency classes of operation.
Specified 150 Volt, 40.68 MHz Characteristics:
Output Power = 300 Watts.
Gain = 16dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(ON)
I
DSS
I
GSS
g
fs
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 μA)
Drain-Source On-State Resistance 1 (V
GS = 10V
, I
D = 6.5A
)
Zero Gate Voltage Drain Current (V
DS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 6.5A)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
MIN
TYP
MAX
1000
1.0
25
250
±100
3.3
7
9
2
4
UNIT
Volts
ohms
μA
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF466A_B
1000
1000
13
±30
357
0.35
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
ARF466A
ARF466B
TO-264
Common
Source
Microsemi Website - http://www.microsemi.com
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.


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