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ARF466A Datasheet(PDF) 3 Page - Microsemi Corporation

Part No. ARF466A
Description  RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

ARF466A Datasheet(HTML) 3 Page - Microsemi Corporation

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ARF466A_B
TYPICAL PERFORMANCE CURVES
T
C, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25
0
25
50
75
100 125 150
25
20
15
10
5
0
0
5
10
15
20
25
30
5.5V
4.5V
5V
6V
V
GS=15 & 10V
8V
4V
Figure 7b, TRANSIENT THERMAL IMPEDANCE
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Z
OL (
Ω)
Z
IN
- Gate shunted with 25
Ω
IDQ = 100mA
Z
OL -
Conjugate of optimum load for 300W output at Vdd = 150V
Z
IN (
Ω)
2.0
13.5
27.1
40.7
65
17.9 - j 11.2
1.1 - j 4.9
.25 - j 1.5
.15 - j 0.9
.31 + j 2.0
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
0.113
°C/W
0.236
°C/W
0.0130 F
0.147 F
Power
(watts)
RC MODEL
Junction
temp (
°C)
Case temperature (
°C)


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