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APTGT200SK170D3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. APTGT200SK170D3G
Description  Buck Chopper Trench Field Stop IGBT Power Module
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APTGT200SK170D3G Datasheet(HTML) 2 Page - Microsemi Corporation

   
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APTGT200SK170D3G
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
3
mA
Tj = 25°C
2.0
2.5
VCE(on)
Collector Emitter on Voltage
VGE = 15V
IC = 200A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 8 mA
5.2
5.8
6.4
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
18
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
0.6
nF
QG
Gate charge
VGE=±15V, IC=200A
VCE=900V
2.3
µC
Td(on)
Turn-on Delay Time
280
Tr
Rise Time
80
Td(off)
Turn-off Delay Time
850
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω
120
ns
Td(on)
Turn-on Delay Time
300
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
1000
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω
200
ns
Tj = 25°C
58
Eon
Turn On Energy
Tj = 125°C
78
Tj = 25°C
43
Eoff
Turn Off Energy
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω
Tj = 125°C
63
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 1000V
tp ≤ 10µs ; Tj = 125°C
800
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
750
IRRM
Maximum Reverse Leakage Current
VR=1700V
Tj = 125°C
1000
µA
IF
DC Forward Current
Tc = 80°C
200
A
Tj = 25°C
1.8
2.2
VF
Diode Forward Voltage
IF = 200A
Tj = 125°C
1.9
V
Tj = 25°C
385
trr
Reverse Recovery Time
Tj = 125°C
490
ns
Tj = 25°C
56
Qrr
Reverse Recovery Charge
Tj = 125°C
92
µC
Tj = 25°C
24
Err
Reverse Recovery Energy
IF = 200A
VR = 900V
di/dt =3200A/µs
Tj = 125°C
48
mJ


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